Capable of driving voltages beyond 150V and supplying multiple subscriber lines at loop lengths exceeding 6km
Diode, a manufacturer and supplier of application specific standard products within the broad discrete and analog semiconductor market, has released a pair of N-channel MOSFETs, which it claims to offer designers of Voice over Internet Protocol (VoIP) communications equipment a more rugged offering that reduces circuit complexity and cost.
According to Diodes, the ZXMN15A27K and ZXMN20B28K are designed to meet the stringent requirements of the primary switch position in transformer based subscriber line interface circuits (SLIC) with DC/DC converters in a variety of VoIP applications, including voice over broadband systems, PBX systems, cable and DSL gateways.
The company said that the devices feature breakdown voltages of 150V and 200V, respectively, and will withstand the high pulse avalanche energy and commutation modes in the SLIC environment without the need for additional protection circuitry.
When combined with the right choice of transformer, these MOSFETs are capable of driving line voltages beyond 150V and supplying multiple subscriber lines at loop lengths exceeding 6km, the company claims.
In addition, the low input capacitance of these MOSFETs makes them easy to drive directly from the SLIC controlled IC with minimal or no buffering, further simplifying circuit design and reducing component count and cost. The ZXMN20B28K is also capable of low gate drive at logic level, the company added.