Available in 48-pin ball grid array package and 54-pin thin small outline package
Everspin Technologies has introduced a 3.3-volt, parallel I/O non-volatile16-megabit (Mb) magnetic random access memory (MRAM) that features 35ns access times with unlimited read/write cycles.
According to Everspin, the MR4A16B is organised as 1,048,576 words of 16 bits and is immune to soft error rates associated with cosmic rays. It is pin and function-compatible with asynchronous SRAM and includes commercial (0°C to +70 °C) and industrial temperature (-40°C to +85 °C) range options.
The MR4A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOPII). These packages are compatible with similar low-power SRAM products and other non-volatile RAM products.
Saied Tehrani, chief operating officer at Everspin, said: “Everspin continues to rapidly expand its MRAM portfolio, enabling more customers to differentiate their products. Our product roadmap will deliver MRAM at increasingly higher densities, while maintaining MRAM’s unique characteristics in a cost effective way.”
Samples are available now, with production quantities beginning in July 2010.