Combines 34-nanometer (nm) 4Gb SLC NAND flash memory and 50nm 2Gb LPDDR
Micron Technology said that it has combined the34-nanometer (nm) 4Gb SLC NAND flash memory and 50nm 2Gb LPDDR to produce the NAND-LPDDR MCP combination in the market.
Micron’s new 4Gb NAND-2Gb LPDDR MCP is targeted at smart phones, personal media players and emerging MIDs where small form factor, low-cost and power savings are critical features, the company said. According to Micron, the 4Gb NAND-2Gb LPDDR combination is targeted at mobile devices, and has the flexibility to support higher densities up to 8Gb NAND and 8Gb LPDDR, as the mobile market integrates multimedia functionality.
In addition to its MCP portfolio, Micron also offers a host of memory products for the mobile market, including discrete NAND and LPDRAM parts, e·MMC 4.4 managed NAND solutions and NANDcode software.
Eric Spanneut, director of mobile memory marketing, said:“With Micron’s 34nm 4Gb NAND and 50nm 2Gb LPDDR monolithic die used in this package, we are providing customers with the most advanced solution available in NAND-based MCPs. By combining the industry’s leading NAND and DRAM processes within our new generation of MCPs, we are able to easily accommodate the shift to high-density NAND devices as the industry progresses toward multi-function mobile devices.”
Micron is currently sampling the 4Gb NAND-2Gb LPDDR MCP with customers and expects to be in volume production in early 2010.