Offers 30% faster random-cycle performance compared to existing 288Mbit devices
Renesas Electronics has launched the new 1.1Gb memory devices for use in networking equipment, including switches and routers for the next-generation ethernet standard (100GbE) and beyond.
Renesas said that the new network memory devices provide low power consumption, large capacity and high speed in one chip achieved through 40nm embedded DRAM (eDRAM) technology.
The 1.1Gb memory devices feature 4x the memory capacity, a 30% faster random-cycle performance for high-speed data reads and writes, and twice the operating frequency, compared to the company’s existing 288Mbit low-latency DRAM devices.
In addition, the new memory devices offers a programmable on-die termination which integrates on-chip termination devices for the input-signal pins and a data-inversion function that reduces noise at data output.