Processes random read commands at 43,000 input/outputs per second (IOPS) and random writes at 11,000 IOPS
Samsung Electronics has developed 100, 200 and 400 gigabyte (GB) multi-level-cell (MLC) solid state drives (SSDs) for use as the primary storage in enterprise storage systems.
The new storage offering employs 30-nanometer-class MLC NAND flash chips with a Toggle DDR interface and a controller that uses a 3Gb/s (gigabits per second) SATA interface.
Samsung said the new drives can process random read commands at 43,000 input/outputs per second (IOPS) and random writes at 11,000 IOPS.
The new enterprise SSDs have a 150 times higher IOPS/Watt rate compared to 15K RPM HDDs, making them able to process 150 times more data while consuming the same amount of energy.
In addition, the new SSDs feature an ‘end-to-end data protection’ function with advanced data encryption algorithm to assure reliability and security for the drive.
Samsung widens its range of SSD densities for server and storage applications with the new SSDs to include 2.5 inch 50, 60, 100 and 120GB SSDs using SLC NAND flash memory, and 2.5 inch 100, 200 and 400GB SSDs using MLC NAND flash memory.
Samsung Electronics memory product planning & application engineering team senior vice president Byungse So said as more and more server makers are adopting SSDs for use in eco-friendly platforms that consume less electrical power, the need for high-density SSDs in the server market is growing rapidly.
"While Samsung is already well situated in the SSD market for enterprise servers with high-performance SSDs using single-level-cell (SLC) NAND flash memory, we are now expanding our line-up to include high-density SSDs using MLC NAND flash memory," So said.