Offers read speed of 20MB/s and write speed of 10MB/s
Samsung Electronics said that it has started the first production of 20nm class NAND chips for use in secure digital memory cards and embedded memory offerings.
Based on this technology, the introduction of 32GB MLC NAND will expand the company’s memory card offerings for smart phones, high-end IT applications and high-performance memory cards.
The company claims that the 20nm-class MLC NAND has a 50 % higher productivity level than 30nm-class MLC NAND. The write performance of a 20nm-class-based, 8GB and higher density, SD card is 30% faster than the 30nm-class NAND and it delivers a read speed of 20MB/s and write speed of 10MB/s.
Mr Soo-In Cho, president of Samsung Electronics, said :In just one year after initiating 30nm-class NAND production, Samsung has made available the next generation node 20nm-class NAND, which exceeds most customers requirements for high-performance, high-density NAND-based solutions.
The new 20nm-class NAND is not only a significant step forward in process design, but we have incorporated advanced technologies into it to enable substantial performance innovation.
Memory cards based in the 20nm-class are expected to be available from 4GB through 64GB densities.