16GB dual rank, 4Gb 40nm-class DDR3 based registered DIMM
Samsung Electronics has said that its new 4 gigabit (Gb)-based 40 nanometer (nm) class low power DDR3 memory has been selected by HP to use in its ProLiant G7 servers.
The new 4Gb memory technology provides high memory performance while consuming low power and also raises the registered dual inline memory module (RDIMM) density to 32GB.
Samsung Electronics said that the 16GB dual rank, 4Gb 40nm-class DDR3 based registered DIMM (dual in-line memory module) provides faster performance, and is capable of running 1333MHz at two DIMMs per channel (DPC).
In addition, the 32GB quad rank Samsung DDR3 doubles the overall memory capacity in new dual processor servers, increasing the maximum memory capacity to 384GB from 192GB.
Samsung Semiconductor memory marketing and product planning vice president Jim Elliott said their new 4Gb 40nm-class DDR3 provides an ideal Green offering for server manufacturers seeking to meet the data centre’s insatiable desire for higher performance, with higher densities at lower voltages.
HP industry standard servers and software vice president of marketing Jim Ganthier said their ProLiant servers combined with Samsung 4Gb memory technology allows clients to improve data centre server and energy efficiency while accelerating application performance.