Facility is expected to be at full production levels later in 2011
Intel and Micron Technology, a provider of advanced semiconductor offerings, have expanded their NAND Flash memory joint venture operations with the opening of $3bn IM Flash facility in Singapore.
The new 300 millimeter facility is expected to employ about 1,200 and is ramping production of the companies’ 25 nanometer (nm) NAND Flash memory.
The IM Flash facility is expected to be at full production levels later in 2011.
Along with the new Singapore facility, the joint venture produces products at two other joint venture manufacturing locations: Lehi, Utah, and Micron’s Manassas, Virginia, facility.
Further, Intel and Micron introduced 20nm NAND Flash memory process technology that will be implemented at the IM Flash facilities during the course of 2011.
Intel NAND manufacturing and operations vice president and director Dave Baglee said the Intel-Micron partnership has been highly successful in developing innovative NAND Flash technology.
"The IM Flash joint venture has been able to create tremendous momentum and industry leading manufacturing capabilities. We look forward to adding IM Flash Singapore to our global manufacturing network," Baglee said.