Both 2Gb and 4Gb DDR3Lm will be adopted into Micron’s 30nm class
Micron Technology has introduced a new product category of low-power DDR3 offerings targeted at the tablet and ultrathin markets.
The new 2-gigabit (Gb) and 4Gb "DDR3Lm" offerings focus on low self-refresh power (IDD6) for longer battery life, while maintaining the performance and cost effectiveness of PC DRAM, the company claims
Micron’s 2Gb DDR3Lm will provide up to 50% self-refresh power savings versus standard 2Gb DDR3L while driving performance up to -1600 MT/s when needed and the 4Gb DDR3Lm product delivers the same optimised power efficiency as the 2Gb part, with a reduced chip count.
Both 2Gb and 4Gb DDR3Lm will be adopted into Micron’s 30 nm class to further optimise the power and performance features, with the 4Gb device hitting a 3.7mA IDD6 target in standby mode, while supporting speeds up to -1866 MT/s.
Micron DRAM Marketing vice-president Robert Feurle said power reduction is becoming ever more critical in the fast growing ultrathin markets.
"Micron’s expertise with traditional PC memory requirements enables these markets to enjoy high performance targets and optimal cost efficiencies. The combination of our commitment to customer collaboration and dedication to leading the way in DRAM technologies has proven highly successful, and this new class of 30nm DRAM continues to deliver on that promise," said Feurle.