Broadband networking solution provider NEC Electronics has launched two new technologies to manufacture 40 nanometer system-on-chip devices with embedded dynamic random access memory.
In early 2006, NEC also partnered with Sony and Toshiba to develop a 45 nanometer (nm) process.
According to NEC, the UX8GD embedded dynamic random access memory (eDRAM) technology operates at a speed of 800mhz and has low operating power, suitable for building digital video cameras and game consoles.
The company claims that the UX8LD eDRAM technology features low leakage-current levels that reduce power consumption by as much two-thirds compared to equivalent SRAM. This is used in mobile handsets and portable devices that require low standby power.
The UX8GD and UX8LD technologies combine 40nm CMOS process technology with its eDRAM process technology, and are available in memory configurations up to 256Mb.
The company also said that the cell size is 0.06 square micron meters, 50% smaller than its previous 55nm UX7LSeD eDRAM, which contributes to lower costs.
In February this year, NEC’s competitor IBM claimed that it will be able to pack up to 48MB of eDRAM on a processor or ASIC when its 45nm process technology comes online in 2008.
Source: ComputerWire daily updates