Achieves 40% reduced low power consumption compared to Renesas’ existing power devices
Semiconductor company Renesas Electronics has developed a Schottky barrier diode (SBD), the RJS6005TDPP, employing silicon carbide (SiC), a material considered to have great potential for use in power semiconductor devices.
The new SiC Schottky barrier diode incorporates the technology developed together by Hitachi and Renesas Electronics, which contributed to achieving approximately 40% reduced low power consumption compared to Renesas Electronics’ existing power devices employing conventional silicon (Si).
The new SiC-SBD has a voltage rating of only 1.5 volts (V), lower than that of existing Si fast trigger diode products, and uses a package equivalent to the industry-standard fully-moulded TO-220, with which it is also pin compatible.
In addition, the temperature dependency of the voltage characteristic is small, ensuring that a stable forward voltage can be obtained even under high-temperature conditions.
RJS6005TDPP SiC SBD can replace conventional silicon diodes on existing printed wiring boards.
Renesas Electronics plans to enhance its kit offerings and compound semiconductor devices, with the new high-voltage SiC-SBD power devices at the core, supplemented by peripheral power supply control ICs, high-performance IGBTs, high-voltage super-junction MOSFETs, and photocouplers.