Uses an SiC diode based on low-leakage SiC-SBD technology developed jointly by Hitachi and Renesas
Semiconductor offerings provider Renesas Electronics has released three silicon carbide (SiC) compound power devices, the RJQ6020DPM, the RJQ6021DPM and the RJQ6022DPM.
The three silicon carbide devices incorporate multiple SiC diodes and multiple power transistors in a single package to compose a power converter circuit or switching circuit.
In addition, the new products have a voltage tolerance of 600V and use an SiC diode based on low-leakage SiC-SBD technology developed jointly by Hitachi and Renesas.
The silicon carbide (SiC) compound power devices combine low loss and compactness and are available in a fully moulded TO-3P package with a 5-pin configuration and pin assignments optimised for specific applications, making it easy to configure a circuit unit incorporating them.
The RJQ6020DPM device combines in a single package an SiC-SBD and two high-voltage power MOSFETs required in switching circuits for critical-conduction mode PFC in the power supplies of products such as air conditioners or flat-panel TVs.
The RJQ6021DPM device combines in a single package an SiC-SBD and two IGBTs required for PFC in applications such as AC/DC rectifiers for communication equipment and PC servers.
The RJQ6022DPM device combines in a single package two SiC-SBDs and two IGBTs required for half-bridge circuits in inverters for applications such as motor drive in air conditioners and industrial machinery.