Radio frequency systems developer RF Micro Devices has introduced the micro-electro-mechanical systems technology for radio frequency applications. Based on this technology, the company will introduce the transmit/receive switch and a mode-switch for 3G multimode handsets.
According to RF Micro Devices, the micro-electro-mechanical systems (MEMS) switch technology will increase the speed of 3G deployment by reducing the product footprint, which will extend handset talk time. The MEMS switches can also be used in the output circuit of power amplifiers (PA) to create a tunable PA. It supports the company’s cellular RF power module requirements, including low insertion loss, high isolation and high harmonic rejection.
RF Micro expects its MEMS technology, when combined with its RF systems, will enable single-chip front ends and software defined radios capable of accommodating both cellular and non-cellular wireless protocol. In addition to RF MEMS switches, it is also planning to introduce other RF MEMS devices such as filters, resonators and sensors.
The company said that it will construct a 200mm R&D wafer fab to support its MEMS development. The MEMS R&D fab will be located with its gallium nitride (GaN) R&D organization in Mooresville, North Carolina.
RF Micro has also introduced other technologies such as hermetically sealed wafer level packaging (WLP), integrated conformal shielding, gallium nitride (GaN). According to the company, the new technologies will expand its growth prospects in markets targeted by its newly formed Multi-Market Products Group (MPG), including wireless infrastructure, wireless access, broadband/consumer and aerospace and defense.
Source: ComputerWire daily updates